Impact of light-element impurities on crystalline defect generation in silicon wafer

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

研究成果: ジャーナルへの寄稿学術誌査読

10 被引用数 (Scopus)

抄録

In multi-crystalline silicon grown by unidirectional solidification, there are many origins of crystalline defects. In this study, we investigated the effect of light-element impurities on the generation of crystalline imperfections during crystal growth. In order to control the interfusion of impurities, we regulate the Ar gas flow in the atmosphere on the basis of a computer simulation. The etch pit densities in the sample fabricated without and with Ar gas flow control in the atmosphere were 1.5 × 10 5-7.0 × 10 7 and 5.0 × 10 3-4.0 × 10 5 cm -2, respectively. In the sample fabricated without Ar gas flow control, the precipitates consisting of light-elements were observed in the region where the etch pit density markedly increased. In the region with the highest etch pit density, there were small-angle grain boundaries consisting of dislocations. We believed that the precipitates consisting of light-element impurities were the potential origins of small-angle grain boundaries. The light-element impurities should affect the crystalline defect generation induced during crystal growth, and thereby should be controlled.

本文言語英語
論文番号02BP08
ジャーナルJapanese journal of applied physics
51
2 PART 2
DOI
出版ステータス出版済み - 2月 2012

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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