@inproceedings{6e13b34e860f44cc81285e980d2df681,
title = "Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application",
abstract = "This paper presents a newly developed square law detector array whose NEP is as low as ∼ 1 pW/Hz0.5 for 1.0 THz waves. The detector array using high electron mobility transistor (HEMT) with InGaAs/InAs/InGaAs double hetero-structured channel has been fabricated. The InAs-HEMT was fabricated on a quartz substrate using the layer transfer technology. Also, an array of square law detectors was developed by applying advanced selective etching, atomic layer deposition, and metallization to the transferred hetero-structured layers. The static analysis revealed that the transistor shows electron mobility as high as 3,200 cm2/Vs and low leakage with subthreshold slope as low as ∼ 100 mV/dec. Detection performance was characterized by directly inputting 1.0 THz waves thorough a THz probe to each of the arrayed detectors. It is also demonstrated that the detection characteristics were well described by the analytical formulae derived from the channel-carrier behavior model. The experimental results suggested that the developed detector array is a promising candidate for imaging application.",
author = "Hiromu Kojima and Daishi Kido and Haruichi Kanaya and Hiroyuki Ishii and Tatsuro Maeda and Eiji Kume and Mutsuo Ogura and Tanemasa Asano",
note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019 ; Conference date: 04-02-2019 Through 07-02-2019",
year = "2019",
doi = "10.1117/12.2510794",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Sadwick, \{Laurence P.\} and Tianxin Yang",
booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII",
address = "United States",
}