Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Shojiro Komatsu; Keiji Kurashima; Hisao Kanda; Katsuyuki Okada; Mamoru Mitomo; Yusuke Moriyoshi; Yoshiki Shimuzu; Masaharu Shiratani; Toshiki Nakano; Seiji Samukawa

doi:10.1063/1.1527987

Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Shojiro Komatsu
, Keiji Kurashima
, Hisao Kanda
, Katsuyuki Okada
, Mamoru Mitomo
, Yusuke Moriyoshi
, Yoshiki Shimuzu
, Masaharu Shiratani
, Toshiki Nakano
, Seiji Samukawa

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

19 被引用数 (Scopus)

抄録

A highly crystalline 5H-polytypic form of sp³-bonded boron nitride (BN) was prepared by plasma-packets-assisted pulsed-laser deposition. The structure of the crystallites was confirmed using electron energy loss spectroscopy and transmission electron diffraction. The material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperature.

本文言語	英語
ページ（範囲）	4547-4549
ページ数	3
ジャーナル	Applied Physics Letters
巻	81
号	24
DOI	https://doi.org/10.1063/1.1527987
出版ステータス	出版済み - 12月 9 2002

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1527987

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引用スタイル

Komatsu, S., Kurashima, K., Kanda, H., Okada, K., Mitomo, M., Moriyoshi, Y., Shimuzu, Y., Shiratani, M., Nakano, T., & Samukawa, S. (2002). Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm. Applied Physics Letters, 81(24), 4547-4549. https://doi.org/10.1063/1.1527987

Komatsu, S, Kurashima, K, Kanda, H, Okada, K, Mitomo, M, Moriyoshi, Y, Shimuzu, Y, Shiratani, M, Nakano, T & Samukawa, S 2002, 'Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm', Applied Physics Letters, vol. 81, no. 24, pp. 4547-4549. https://doi.org/10.1063/1.1527987

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