TY - GEN
T1 - High-voltage driver LSI for passive matrix driven electronic paper with 160 tri-level voltage outputs
AU - Hattori, Reiji
PY - 2012
Y1 - 2012
N2 - We have succeeded in developing a custom LSI with 160-outputs which supply tri-level voltages as high as 110 V using LDMOS technology for driving a passive-matrix driven electronic paper. The level shifter was designed to suppress the power consumption by employing the new level shifter which needed no DC bias voltage. The LSI chip was thinned to 35 m for direct-mounting onto a flexible display.
AB - We have succeeded in developing a custom LSI with 160-outputs which supply tri-level voltages as high as 110 V using LDMOS technology for driving a passive-matrix driven electronic paper. The level shifter was designed to suppress the power consumption by employing the new level shifter which needed no DC bias voltage. The LSI chip was thinned to 35 m for direct-mounting onto a flexible display.
UR - https://www.scopus.com/pages/publications/84860806832
UR - https://www.scopus.com/pages/publications/84860806832#tab=citedBy
U2 - 10.1109/JEC-ECC.2012.6186946
DO - 10.1109/JEC-ECC.2012.6186946
M3 - Conference contribution
AN - SCOPUS:84860806832
SN - 9781467304832
T3 - Proceedings of the 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012
SP - 1
EP - 5
BT - Proceedings of the 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012
T2 - 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012
Y2 - 6 March 2012 through 9 March 2012
ER -