TY - GEN
T1 - High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions
AU - Yajima, T.
AU - Tanaka, T.
AU - Samata, Y.
AU - Uchida, K.
AU - Toriumi, A.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - The analog aspects of the thermistor circuits have limited the full management of thermal degrees of freedom in electronics. In this study, the binary thermistor using the VO2 metal-insulator transition enables the direct conversion of the heat signal to the digital bit. The bidirectional conversion is also demonstrated by using the binary thermistor with the microscopic Joule heater, enabling the heat-mediated data transfer between electrically insulated systems. These devices can operate at high speed (sub-ns) and low energy (sub-pJ) due to the microscopic heat confinement and the absence of analog-digital conversion. The heat signal processing technology will enable the local heat management in electronics as well as the convenient implementation of non-charge-based functionalities.
AB - The analog aspects of the thermistor circuits have limited the full management of thermal degrees of freedom in electronics. In this study, the binary thermistor using the VO2 metal-insulator transition enables the direct conversion of the heat signal to the digital bit. The bidirectional conversion is also demonstrated by using the binary thermistor with the microscopic Joule heater, enabling the heat-mediated data transfer between electrically insulated systems. These devices can operate at high speed (sub-ns) and low energy (sub-pJ) due to the microscopic heat confinement and the absence of analog-digital conversion. The heat signal processing technology will enable the local heat management in electronics as well as the convenient implementation of non-charge-based functionalities.
UR - https://www.scopus.com/pages/publications/85081045231
UR - https://www.scopus.com/pages/publications/85081045231#tab=citedBy
U2 - 10.1109/IEDM19573.2019.8993502
DO - 10.1109/IEDM19573.2019.8993502
M3 - Conference contribution
AN - SCOPUS:85081045231
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Y2 - 7 December 2019 through 11 December 2019
ER -