High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

William Makoto Nakamura; Hidefumi Matsuzaki; Hiroshi Sato; Yuuki Kawashima; Kazunori Koga; Masaharu Shiratani

doi:10.1016/j.surfcoat.2010.07.081

High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

William Makoto Nakamura
, Hidefumi Matsuzaki
, Hiroshi Sato
, Yuuki Kawashima
, Kazunori Koga
, Masaharu Shiratani

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

36 被引用数 (Scopus)

抄録

We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×10¹⁵cm^-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

本文言語	英語
ページ（範囲）	S241-S245
ジャーナル	Surface and Coatings Technology
巻	205
号	SUPPL. 1
DOI	https://doi.org/10.1016/j.surfcoat.2010.07.081
出版ステータス	出版済み - 12月 25 2010

!!!All Science Journal Classification (ASJC) codes

化学一般
凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/j.surfcoat.2010.07.081

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引用スタイル

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title = "High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells",

abstract = "We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5\% in an area of 4cm in diameter.",

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TY - JOUR

T1 - High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

AU - Nakamura, William Makoto

AU - Matsuzaki, Hidefumi

AU - Sato, Hiroshi

AU - Kawashima, Yuuki

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2010/12/25

Y1 - 2010/12/25

N2 - We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

AB - We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

UR - https://www.scopus.com/pages/publications/78649963247

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U2 - 10.1016/j.surfcoat.2010.07.081

DO - 10.1016/j.surfcoat.2010.07.081

M3 - Article

AN - SCOPUS:78649963247

SN - 0257-8972

VL - 205

SP - S241-S245

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - SUPPL. 1

ER -

High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

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!!!All Science Journal Classification (ASJC) codes

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