TY - JOUR
T1 - High performance all-solution processed InZnO thin-film transistors via photo-functionalization at varying fluence and annealing environment
AU - Corsino, Dianne
AU - Bermundo, Juan Paolo
AU - Fujif, Mami N.
AU - Ishikawa, Yasuaki
AU - Ikenoue, Hiroshi
AU - Uraoka, Yukiharu
N1 - Funding Information:
The authors would like to acknowledge Nissan Chemical Corporation for providing the InZnO precursor solutions
Publisher Copyright:
© 2020 SID.
PY - 2020
Y1 - 2020
N2 - This work presents an all-solution approach to oxide TFT fabrication through the photo-functionalization of InZnO using photo-assisted methods. We fabricated high-performance all-solution devices using UV and excimer laser treatment which are competitive with vacuum-processed TFTs. This work is a big step towards large-area manufacture of low-cost electronics.
AB - This work presents an all-solution approach to oxide TFT fabrication through the photo-functionalization of InZnO using photo-assisted methods. We fabricated high-performance all-solution devices using UV and excimer laser treatment which are competitive with vacuum-processed TFTs. This work is a big step towards large-area manufacture of low-cost electronics.
UR - http://www.scopus.com/inward/record.url?scp=85094218009&partnerID=8YFLogxK
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U2 - 10.1002/sdtp.14134
DO - 10.1002/sdtp.14134
M3 - Conference article
AN - SCOPUS:85094218009
SN - 0097-966X
VL - 51
SP - 1350
EP - 1353
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - 1
T2 - 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020
Y2 - 3 August 2020 through 7 August 2020
ER -