TY - JOUR
T1 - High-Jc thick YBCO coated conductors by TEA-MOD process
AU - Teranishi, Ryo
AU - Matsuda, Junko
AU - Nakaoka, Koichi
AU - Fuji, Hiroshi
AU - Aoki, Yuji
AU - Kitoh, Yutaka
AU - Izumi, Teruo
AU - Yamada, Yutaka
AU - Shiohara, Yuh
N1 - Funding Information:
Manuscript received October 5, 2004. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) as Collaborative Research and Development of Fundamental Technologies for Superconductivity Applications.
PY - 2005/6
Y1 - 2005/6
N2 - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.
AB - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.
UR - https://www.scopus.com/pages/publications/22144451811
UR - https://www.scopus.com/pages/publications/22144451811#tab=citedBy
U2 - 10.1109/TASC.2005.847765
DO - 10.1109/TASC.2005.847765
M3 - Article
AN - SCOPUS:22144451811
SN - 1051-8223
VL - 15
SP - 2663
EP - 2666
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 2 PART III
ER -