TY - JOUR
T1 - High field-effect hole mobility in organic-inorganic hybrid thin films prepared by vacuum vapor deposition technique
AU - Matsushima, Toshinori
AU - Fujita, Katsuhiko
AU - Tsutsui, Tetsuo
PY - 2004/9/15
Y1 - 2004/9/15
N2 - Organic-inorganic layered perovskite films, (C6H 5C2H4NH3)2SnI 4, were grown on 60°C substrates at a growth rate of 0.0005 nm/s by a vacuum vapor deposition technique, and field-effect transistors with a hybrid semiconductor were fabricated. From measurements of ultraviolet-visible (UV-VIS) absorption spectra and X-ray diffraction profiles, the vacuum-deposited films contained a well-developed layered perovskite structure, where inorganic sheets alternate with organic layers in the direction perpendicular to the substrate surface. In the field-effect transistors, the vacuum-deposited hybrid films acted as p-channel semiconductors and exhibited a hole mobility of 0.78cm2/Vs in the saturation regime, a threshold voltage of -1.7V, and a drain current on/off ratio of 4.2 × 105.
AB - Organic-inorganic layered perovskite films, (C6H 5C2H4NH3)2SnI 4, were grown on 60°C substrates at a growth rate of 0.0005 nm/s by a vacuum vapor deposition technique, and field-effect transistors with a hybrid semiconductor were fabricated. From measurements of ultraviolet-visible (UV-VIS) absorption spectra and X-ray diffraction profiles, the vacuum-deposited films contained a well-developed layered perovskite structure, where inorganic sheets alternate with organic layers in the direction perpendicular to the substrate surface. In the field-effect transistors, the vacuum-deposited hybrid films acted as p-channel semiconductors and exhibited a hole mobility of 0.78cm2/Vs in the saturation regime, a threshold voltage of -1.7V, and a drain current on/off ratio of 4.2 × 105.
UR - http://www.scopus.com/inward/record.url?scp=9144243263&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=9144243263&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.L1199
DO - 10.1143/JJAP.43.L1199
M3 - Article
AN - SCOPUS:9144243263
SN - 0021-4922
VL - 43
SP - L1199-L1201
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9 AB
ER -