High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.

本文言語英語
論文番号01AD01
ジャーナルJapanese journal of applied physics
52
1 PART2
DOI
出版ステータス出版済み - 1月 2013

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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