Heptacene: Synthesis and Its Hole-Transfer Property in Stable Thin Films

Heptacene (1) has been produced via a monoketone precursor, 2, which was prepared from 1,2,4,5-tetrabromobenzene in nine steps in a total yield of 10 %. Compound 2 was converted to 1 quantitatively by heating at 202 °C. Heptacene exhibited high thermal stability in the solid state without any observable change over two months. To investigate the potential value of 1 as a material for p-type organic field-effect transistors (OFETs), top-contact OFET devices were fabricated by vacuum deposition of 1 onto a hexamethyldisilazane (HMDS)/SiO₂/Si substrate. The best hole mobility performance was 2.2 cm² V⁻¹ s⁻¹. This is the first report of stable heptacene being used in an effective device and examined for its charge carrier properties.