Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

Yoshifumi Ikoma, Takao Endo, Fumiya Watanabe, Teruaki Motooka

    研究成果: ジャーナルへの寄稿学術誌査読

    50 被引用数 (Scopus)

    抄録

    We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

    本文言語英語
    ページ(範囲)L301-L303
    ジャーナルJapanese journal of applied physics
    38
    3B
    DOI
    出版ステータス出版済み - 1999

    !!!All Science Journal Classification (ASJC) codes

    • 工学一般
    • 物理学および天文学一般

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