Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

研究成果: ジャーナルへの寄稿学術誌査読

53 被引用数 (Scopus)

抄録

Modeling and simulation of the SiC epitaxial growth, and doping in a horizontal hot-wall reactor from common precursors (SiH4; C 3H8 diluted in H2 for growth; N2 and Al(CH3)3 for n-type and p-type doping) are presented. The growth and doping features of SiC thin layers on both Si-terminated and C-terminated surfaces are analyzed as a function of various inlet source gas conditions, i.e., various C/Si ratios. The role of the actual surface mass fluxes of both Si-containing and C-containing species and their ratio is analyzed and compared to the inlet experimental parameters. It is demonstrated that the doping level resulting from lattice site competition effects can be quantified by the actual C/Si ratio calculated above the growing surface. Moreover, the surface morphology of the epitaxial layer is explained on the basis of the mass fluxes at the growing surface.

本文言語英語
ページ(範囲)516-522
ページ数7
ジャーナルChemical Vapor Deposition
12
8-9
DOI
出版ステータス出版済み - 8月 2006
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 表面および界面
  • プロセス化学およびプロセス工学

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