Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating

Shoichiro Fukushima, Satoru Fukamachi, Masaaki Shimatani, Kenji Kawahara, Hiroki Ago, Shinpei Ogawa

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

This study presents high-responsivity graphene-based deep-ultraviolet (DUV) photodetectors using chemical vapor deposition (CVD)-hexagonal boron nitride (h-BN) photogating. To improve the DUV photoresponse, h-BN was used as a photosensitizer in graphene field-effect transistors (GFETs). The h-BN photosensitizers were synthesized using CVD and then transferred onto a SiO2/Si substrate. The behavior of h-BN irradiated with DUV light was investigated using cathodoluminescence and UV–VIS reflectance. Under 260 nm light, it exhibited a clear photoresponse with an ultrahigh responsivity of 19600 AW−1, which was 460% higher than a GFET device without h-BN photosensitizers. A noise equivalent power of 3.09×10−13 W/Hz1/2 was achieved.

本文言語英語
ページ(範囲)2090-2101
ページ数12
ジャーナルOptical Materials Express
12
5
DOI
出版ステータス出版済み - 5月 1 2022

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料

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