Ge-on-insulator fabrication based on Ge-on-nothing technology

Ge-on-Insulator (GOI) is considered to be a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach, a regular macropore array is formed by lithography and dry etching. These pores close and merge upon annealing, forming a suspended monocrystalline Ge membrane on one buried void. GOI is fabricated by direct bonding of GeON on Si carrier substrates, using an oxide bonding interface, and subsequent detachment. The fabricated GOI shows uniform physical properties as demonstrated using micro-photoluminescence measurements. Its electrical characteristics and cross-sectional structure are superior to those of Smart-Cut^TM GOI. To demonstrate its application potential, back-gate GOI capacitors and MOSFETs are fabricated. Their characteristics nicely agree with the theoretically calculated one and show typical MOSFET operations, respectively, which indicates promising Ge crystallinity. This method, therefore, shows the potential to provide high-quality GOI for advanced Ge application devices.