Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.mssp.2004.09.036

Ge-enhanced MILC velocity in a-Ge/a-Si/SiO₂ layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

7 被引用数 (Scopus)

抄録

Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO₂ layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO₂ single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

本文言語	英語
ページ（範囲）	83-88
ページ数	6
ジャーナル	Materials Science in Semiconductor Processing
巻	8
号	1-3 SPEC. ISS.
DOI	https://doi.org/10.1016/j.mssp.2004.09.036
出版ステータス	出版済み - 2月 2005

!!!All Science Journal Classification (ASJC) codes

材料科学（全般）
凝縮系物理学
材料力学
機械工学

文献へのアクセス

10.1016/j.mssp.2004.09.036

他のファイルとリンク

引用スタイル

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title = "Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure",

abstract = "Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.",

author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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N2 - Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

AB - Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

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