Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer

Kyoichi Suzuki, Yuichi Harada, Fumihiko Maeda, Koji Onomitsu, Toru Yamaguchi, Koji Muraki

研究成果: ジャーナルへの寄稿学術誌査読

13 被引用数 (Scopus)

抄録

Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

本文言語英語
論文番号125702
ジャーナルApplied Physics Express
4
12
DOI
出版ステータス出版済み - 12月 2011
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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