We report the fabrication of p-n + diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n + homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10−2 Ωcm2, and current density over 260 Acm−2 at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 1010 at ±6 V, promoting the junction in UV detection applications.
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