TY - GEN
T1 - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth
AU - Kutsukake, K.
AU - Abe, T.
AU - Usami, N.
AU - Fujiwara, K.
AU - Morishita, K.
AU - Nakajima, K.
PY - 2010
Y1 - 2010
N2 - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.
AB - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.
UR - http://www.scopus.com/inward/record.url?scp=78650154100&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650154100&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5617200
DO - 10.1109/PVSC.2010.5617200
M3 - Conference contribution
AN - SCOPUS:78650154100
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 810
EP - 811
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -