Focused ion beam imaging of defects in multicrystalline si for photovoltaic application

Y. Miyamura, T. Sekiguchi, J. Chen, J. Y. Li, K. Watanabe, K. Kumagai, A. Ogura

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.

本文言語英語
ページ(範囲)991-993
ページ数3
ジャーナルActa Physica Polonica A
125
4
DOI
出版ステータス出版済み - 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学一般

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