Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

Yukio Watanabe; M. Tanamura; Y. Matsumoto; H. Asami; A. Kato

doi:10.1063/1.113524

Ferroelectric/(La,Sr)₂CuO₄ epitaxial heterostructure with high thermal stability

Yukio Watanabe
, M. Tanamura
, Y. Matsumoto
, H. Asami
, A. Kato

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

10 被引用数 (Scopus)

抄録

Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O₃/(La,Sr)₂CuO₄ multilayers were grown on SrTiO₃ (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)₂CuO₄ layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

本文言語	英語
ページ（範囲）	299
ページ数	1
ジャーナル	Applied Physics Letters
DOI	https://doi.org/10.1063/1.113524
出版ステータス	出版済み - 1995
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

文献へのアクセス

10.1063/1.113524

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引用スタイル

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title = "Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability",

abstract = "Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-{\AA}-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.",

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year = "1995",

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T1 - Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

AU - Watanabe, Yukio

AU - Tanamura, M.

AU - Matsumoto, Y.

AU - Asami, H.

AU - Kato, A.

PY - 1995

Y1 - 1995

N2 - Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

AB - Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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