TY - JOUR
T1 - Facet-Selective Electrostatic Assembling of 2D MXene onto Anisotropic Single-Crystal Metal Oxides for Enhanced Photocatalysis
AU - Kashiwaya, Shun
AU - Myakala, Stephen Nagaraju
AU - Nekita, Sho
AU - Tsuji, Yuta
AU - Niu, Yuran
AU - Liu, Xianjie
AU - Qin, Leiqiang
AU - Sharma, Manisha
AU - Zakharov, Alexei
AU - Hultman, Lars
AU - Eder, Dominik
AU - Saito, Hikaru
AU - Cherevan, Alexey
AU - Rosen, Johanna
N1 - Publisher Copyright:
© 2026 The Author(s). Advanced Materials published by Wiley-VCH GmbH.
PY - 2026/3/12
Y1 - 2026/3/12
N2 - Designing composite photocatalytic systems with nanoscale precision is crucial. While conventional facet-selective photo-deposition successfully utilizes spherical co-catalysts, the directed deposition of pre-synthesized two-dimensional (2D) materials onto specific facets remains extremely challenging. This work demonstrates an electrostatic assembly strategy for the precise deposition of 2D transition metal carbides (MXenes) onto anisotropic single-crystal semiconducting metal oxides. By precisely controlling the solution pH, we modulated the surface charge of the MXenes and the distinct crystallographic facets of the metal oxides, enabling selective deposition driven by electrostatic attraction. Negatively charged Mo4/3C MXenes were selectively deposited on the electron-rich (101) surface of TiO2 at pH 3, the (100) surface of Cu2O exposed at pH 11, and the (010) surface of BiVO4 at pH 1.5. The high facet selectivity was confirmed through a combination of advanced techniques, including electron microscopy, electron spectroscopy, and synchrotron-based spectromicroscopy. This selective interfacial engineering promotes spatially separated charge carrier migration toward distinct facets, while Schottky barriers form at the MXenes/oxides interfaces. The MXenes act as efficient reduction co-catalysts, facilitating the rapid consumption of electrons, thereby enhancing photocatalytic hydrogen evolution. This work establishes a generalizable, non-photolytic method for integrating challenging 2D co-catalysts with facet-engineered semiconductors for designing composite photocatalysts.
AB - Designing composite photocatalytic systems with nanoscale precision is crucial. While conventional facet-selective photo-deposition successfully utilizes spherical co-catalysts, the directed deposition of pre-synthesized two-dimensional (2D) materials onto specific facets remains extremely challenging. This work demonstrates an electrostatic assembly strategy for the precise deposition of 2D transition metal carbides (MXenes) onto anisotropic single-crystal semiconducting metal oxides. By precisely controlling the solution pH, we modulated the surface charge of the MXenes and the distinct crystallographic facets of the metal oxides, enabling selective deposition driven by electrostatic attraction. Negatively charged Mo4/3C MXenes were selectively deposited on the electron-rich (101) surface of TiO2 at pH 3, the (100) surface of Cu2O exposed at pH 11, and the (010) surface of BiVO4 at pH 1.5. The high facet selectivity was confirmed through a combination of advanced techniques, including electron microscopy, electron spectroscopy, and synchrotron-based spectromicroscopy. This selective interfacial engineering promotes spatially separated charge carrier migration toward distinct facets, while Schottky barriers form at the MXenes/oxides interfaces. The MXenes act as efficient reduction co-catalysts, facilitating the rapid consumption of electrons, thereby enhancing photocatalytic hydrogen evolution. This work establishes a generalizable, non-photolytic method for integrating challenging 2D co-catalysts with facet-engineered semiconductors for designing composite photocatalysts.
KW - 2D materials
KW - anisotropic oxides
KW - facet-engineering
KW - photocatalysis
UR - https://www.scopus.com/pages/publications/105029537135
UR - https://www.scopus.com/pages/publications/105029537135#tab=citedBy
U2 - 10.1002/adma.202519087
DO - 10.1002/adma.202519087
M3 - Article
C2 - 41657005
AN - SCOPUS:105029537135
SN - 0935-9648
VL - 38
JO - Advanced Materials
JF - Advanced Materials
IS - 15
M1 - e19087
ER -