Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET

研究成果: 会議への寄与タイプ › 学会誌 › 査読

本文言語	英語
ページ	64-65
ページ数	2
DOI	https://doi.org/10.7567/ssdm.2012.ps-2-12
出版ステータス	出版済み - 2012
イベント	2012 International Conference on Solid State Devices and Materials (SSDM2012) - Kyoto International Conference Center, Kyoto, 日本継続期間: 9月 25 2012 → 9月 27 2012

会議	2012 International Conference on Solid State Devices and Materials (SSDM2012)
国/地域	日本
City	Kyoto
Period	9/25/12 → 9/27/12

文献へのアクセス

研究成果: 会議への寄与タイプ › 学会誌 › 査読

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title = "Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET",

author = "K. Asakawa and K. Yamamoto and D. Wang and H. Nakashima",

year = "2012",

doi = "10.7567/ssdm.2012.ps-2-12",

language = "English",

pages = "64--65",

note = "2012 International Conference on Solid State Devices and Materials (SSDM2012) ; Conference date: 25-09-2012 Through 27-09-2012",

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TY - CONF

T1 - Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET

AU - Asakawa, K.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2012

Y1 - 2012

U2 - 10.7567/ssdm.2012.ps-2-12

DO - 10.7567/ssdm.2012.ps-2-12

M3 - Paper

SP - 64

EP - 65

T2 - 2012 International Conference on Solid State Devices and Materials (SSDM2012)

Y2 - 25 September 2012 through 27 September 2012

ER -