TY - GEN
T1 - Fabrication of micro field emitter tip using ion-beam irradiation-induced self-standing of thin film
AU - Yoshida, Tomoya
AU - Baba, Akiyoshi
AU - Asano, Tanemasa
PY - 2004
Y1 - 2004
N2 - The fabrication of the self-standing field emitter tip and its field emission characteristics were investigated. WSiO2 was used as the emitter material, and the film was deposited by RF magnetron sputtering on SiO2 substrate. The scanning electron microscope (SEM) image of the standing WSiO2 shows that the films bends up at the end where the SiO2 under the WSi2 film was removed. It was observed that the tensile stress in the deposited WSi2 film on the SiO2 film is relaxed near the top surface of the WSi2 film due to the ion bombardment.
AB - The fabrication of the self-standing field emitter tip and its field emission characteristics were investigated. WSiO2 was used as the emitter material, and the film was deposited by RF magnetron sputtering on SiO2 substrate. The scanning electron microscope (SEM) image of the standing WSiO2 shows that the films bends up at the end where the SiO2 under the WSi2 film was removed. It was observed that the tensile stress in the deposited WSi2 film on the SiO2 film is relaxed near the top surface of the WSi2 film due to the ion bombardment.
UR - https://www.scopus.com/pages/publications/23244449291
UR - https://www.scopus.com/pages/publications/23244449291#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:23244449291
SN - 4990247205
T3 - Digest of Papers - Microprocesses and Nanotechnology 2004
SP - 328
EP - 329
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
T2 - 2004 International Microprocesses and Nanotechnology Conference
Y2 - 26 October 2004 through 29 October 2004
ER -