Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Hiroshi Nakashima; Youhei Sugimoto; Yuusaku Suehiro; Keisuke Yamamoto; Masanari Kajiwara; Kana Hirayama; Dong Wang

doi:10.1109/ICSICT.2008.4734660

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure

Hiroshi Nakashima, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, Dong Wang

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

1 被引用数 (Scopus)

抄録

High-permittivity (high-k) dielectrics with HfO₂/Hf _xSi_1-xO_y/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO₂/Si structure. By replacing SiO₂ film of initial structure from plasma oxidized SiO₂ to thermal oxidized SiO₂, the drastic decrease of traps in interfacial layer (IL: Hf_xSi_1-xO_2y) could be successfully achieved, which shows interface state density of 1 × 10¹¹ eV^-1cm^-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO₂ with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

本文言語	英語
ホスト出版物のタイトル	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ	780-783
ページ数	4
DOI	https://doi.org/10.1109/ICSICT.2008.4734660
出版ステータス	出版済み - 2008
イベント	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国継続期間: 10月 20 2008 → 10月 23 2008

出版物シリーズ

名前	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

その他

その他	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国/地域	中国
City	Beijing
Period	10/20/08 → 10/23/08

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学
凝縮系物理学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/ICSICT.2008.4734660

他のファイルとリンク

引用スタイル

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K., & Wang, D. (2008). Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 780-783). 記事 4734660 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734660

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. / Nakashima, Hiroshi; Sugimoto, Youhei; Suehiro, Yuusaku その他.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783 4734660 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Nakashima, H, Sugimoto, Y, Suehiro, Y, Yamamoto, K, Kajiwara, M, Hirayama, K & Wang, D 2008, Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734660, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 780-783, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, 中国, 10/20/08. https://doi.org/10.1109/ICSICT.2008.4734660

Nakashima H, Sugimoto Y, Suehiro Y, Yamamoto K, Kajiwara M, Hirayama K その他. Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734660

Nakashima, Hiroshi ; Sugimoto, Youhei ; Suehiro, Yuusaku その他. / Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 780-783 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure",

abstract = "High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.",

author = "Hiroshi Nakashima and Youhei Sugimoto and Yuusaku Suehiro and Keisuke Yamamoto and Masanari Kajiwara and Kana Hirayama and Dong Wang",

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AU - Nakashima, Hiroshi

AU - Sugimoto, Youhei

AU - Suehiro, Yuusaku

AU - Yamamoto, Keisuke

AU - Kajiwara, Masanari

AU - Hirayama, Kana

AU - Wang, Dong

PY - 2008

Y1 - 2008

N2 - High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

AB - High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

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T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

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BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

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