TY - JOUR
T1 - Extremely low voltage organic light-emitting diodes with p -doped alpha-sexithiophene hole transport and n -doped phenyldipyrenylphosphine oxide electron transport layers
AU - Matsushima, Toshinori
AU - Adachi, Chihaya
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.
AB - Organic light-emitting diodes with p -doped alpha-sexithiophene and n -doped phenyldipyrenylphosphine oxide carrier transport layers are fabricated. In the doped diodes, the authors demonstrate an extremely low driving voltage of 2.9 V at a current density of 100 mA cm2 and very high luminance at a low driving voltage: 1000 cd m2 at 2.4 V, 10 000 cd m2 at 2.8 V, and 920 000 cd m2 at 4.5 V. Such lowered driving voltages and enhanced luminance characteristics are attributed to the generation of free charge carriers by charge transfer from matrix to dopant molecules, resulting in an increase in electrical conductivities and formation of Ohmic contacts at metal/organic interfaces.
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U2 - 10.1063/1.2410236
DO - 10.1063/1.2410236
M3 - Article
AN - SCOPUS:33845951342
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
M1 - 253506
ER -