TY - GEN
T1 - Evaluation of Temperature at SiC Surface during Pulsed Excimer Laser Irradiation
AU - Mutoh, Shogo
AU - Ikeda, Akihiro
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
N1 - Funding Information:
This work was supported in part by KAKENHI (No. 16H02342) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - While high-energy and high-power lasers such as the excimer laser have high potential to provide benefits over conventional thermal processing for power devices made of wide bandgap semiconductors such as 4H-SiC, one of challenges remained is measurement of temperature of materials during processing. In this work, use of the two-color method is investigated to measure time evolution of temperature at the 4H-SiC surface during KrF excimer laser irradiation. It is shown that the surface temperature reaches about 3000 K within a few tens of nanoseconds, which reasonably agrees with thermal simulation. Diffusion of aluminum atoms induced by the laser irradiation is also investigated. Results suggest that diffusion coefficient can be extremely larger than extrapolated from values obtained by the conventional furnace annealing.
AB - While high-energy and high-power lasers such as the excimer laser have high potential to provide benefits over conventional thermal processing for power devices made of wide bandgap semiconductors such as 4H-SiC, one of challenges remained is measurement of temperature of materials during processing. In this work, use of the two-color method is investigated to measure time evolution of temperature at the 4H-SiC surface during KrF excimer laser irradiation. It is shown that the surface temperature reaches about 3000 K within a few tens of nanoseconds, which reasonably agrees with thermal simulation. Diffusion of aluminum atoms induced by the laser irradiation is also investigated. Results suggest that diffusion coefficient can be extremely larger than extrapolated from values obtained by the conventional furnace annealing.
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U2 - 10.1109/JAC-ECC54461.2021.9691436
DO - 10.1109/JAC-ECC54461.2021.9691436
M3 - Conference contribution
AN - SCOPUS:85126786908
T3 - Proceedings of the 2021 International Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2021
SP - 217
EP - 220
BT - Proceedings of the 2021 International Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2021
Y2 - 13 December 2021 through 14 December 2021
ER -