TY - JOUR
T1 - Enlargement of SiC single crystal
T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
AU - Bahng, Wook
AU - Kitou, Yasuo
AU - Nishizawa, Shin Ichi
AU - Yamaguchi, Hirotaka
AU - Khan, Muhammad Nasir
AU - Oyanagi, Naoki
AU - Arai, Kazuo
AU - Nishino, Shigehiro
N1 - Copyright:
Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.
AB - We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.
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M3 - Conference article
AN - SCOPUS:12944317285
SN - 0255-5476
VL - 338
SP - I/-
JO - Materials Science Forum
JF - Materials Science Forum
Y2 - 10 October 1999 through 15 October 1999
ER -