TY - JOUR
T1 - Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures
AU - Sadoh, T.
AU - Kurosawa, M.
AU - Heya, A.
AU - Matsuo, N.
AU - Miyao, M.
N1 - Funding Information:
We are very grateful to Dr. S. Taka and Dr. T. Kitamura of Toshiba Semiconductor for supplying samples and valuable discussion. Valuable comments given by Professor H. Nakashima and Dr. Dong Wang of Kyushu University are also acknowledged. This work was partially supported by a Regional Innovation Cluster Program (Global Type, 2nd Stage) and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .
PY - 2012/2/1
Y1 - 2012/2/1
N2 - Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400-1150°C) and ultraviolet (UV) laser-annealing (wavelength: 248 nm, temperature: 30-400°C) on strain-enhancement in Si-pillars covered with Si 3N 4 stress-liners by plasma-enhanced chemical vapor deposition are investigated. Before annealing, the Si 3N 4 stress-liners induce a tensile strain (∼0.5%) in Si. After thermal-annealing (> 800°C), the strain becomes highly compressive (> ∼0.4%), because of dehydrogenation-induced structural relaxation in Si 3N 4 films. On the other hand, the tensile strain becomes large (>~0.7%) after UV laser-annealing at 400°C, due to non-equilibrium dehydrogenation in Si 3N 4 films. This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.
AB - Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400-1150°C) and ultraviolet (UV) laser-annealing (wavelength: 248 nm, temperature: 30-400°C) on strain-enhancement in Si-pillars covered with Si 3N 4 stress-liners by plasma-enhanced chemical vapor deposition are investigated. Before annealing, the Si 3N 4 stress-liners induce a tensile strain (∼0.5%) in Si. After thermal-annealing (> 800°C), the strain becomes highly compressive (> ∼0.4%), because of dehydrogenation-induced structural relaxation in Si 3N 4 films. On the other hand, the tensile strain becomes large (>~0.7%) after UV laser-annealing at 400°C, due to non-equilibrium dehydrogenation in Si 3N 4 films. This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.
UR - https://www.scopus.com/pages/publications/84857053834
UR - https://www.scopus.com/pages/publications/84857053834#tab=citedBy
U2 - 10.1016/j.tsf.2011.10.088
DO - 10.1016/j.tsf.2011.10.088
M3 - Article
AN - SCOPUS:84857053834
SN - 0040-6090
VL - 520
SP - 3276
EP - 3278
JO - Thin Solid Films
JF - Thin Solid Films
IS - 8
ER -