Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿会議記事査読

4 被引用数 (Scopus)


Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

ジャーナルThin Solid Films
出版ステータス出版済み - 3月 22 2004
イベントProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, フランス
継続期間: 6月 10 20036月 13 2003

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学


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