We newly propose the use of functional oxide to produce O∗radicals in an oxidation furnace for the application to oxidation of semiconductor at low temperatures. SrTi1-xMgxO3%is prepared and placed together with a Si wafer in an electric furnace to perform oxidation of Si in flowing O2 under the atmospheric pressure. X-ray diffraction and gas desorption analyses show that SrTi1-xMgxO3% contains oxygen vacancies and emits atomic oxygen at temperatures above 400 °C. Growth rate of SiO2 at the Si surface is shown to be increased by placing SrTi1-xMgxO3% with Si and the rate increases with increasing the composition x of the oxide. It is also shown that the activation energies of the linear and parabolic rate constants in the Deal-Grove oxidation model is reduced by using SrTi1-xMgxO3% oxidation catalyst.
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