Enhanced optical emission at MoS2-WS2 heterostructure interface with n-N junction

Deepa Thakur, Yukio Sato, M. Sabarigresan, Ranjith Ramadurai, Viswanath Balakrishnan

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

Atomically thin transition metal dichalcogenide based heterostructures are of significant interest for the electronic and optoelectronic device applications. Growth of atomically thin heterostructures have gained remarkable importance due to the unusual electrical response and optical emission at the interface. Here, facile chemical vapour deposition growth of n-N type MoS2-WS2 heterostructure is demonstrated. Multifold enhancement in photoluminescence emission at the interface of MoS2-WS2 heterostructure with local excitonic amplifications arising at the interface is observed. The atomic level structure of interface has been investigated with the aid of aberration corrected scanning transmission electron microscopy. Electrical properties of MoS2-WS2 heterostructure with n-N semiconductor junction are systematically probed using micromanipulators interfaced with scanning electron microscope. Our microscopic and spectroscopic investigations along with electrical and optical responses at the interface contribute to the fundamental knowledge to empower the development of optical devices based on two dimensional heterostructures with enhanced emissions.

本文言語英語
論文番号154923
ジャーナルApplied Surface Science
606
DOI
出版ステータス出版済み - 12月 30 2022

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 凝縮系物理学
  • 物理学および天文学一般
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Enhanced optical emission at MoS2-WS2 heterostructure interface with n-N junction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル