TY - JOUR
T1 - Enhanced critical current under a magnetic field in Sm1+xB 2-xCu3Oy thick films prepared using low-temperature growth technique
AU - Miura, Masashi
AU - Yoshida, Yutaka
AU - Ozaki, Toshinori
AU - Ichino, Yusuke
AU - Tarai, Yoshiaki
AU - Matsumoto, Kaname
AU - Ichinose, Ataru
AU - Horii, Shigeru
AU - Mukaida, Masashi
PY - 2007/9/7
Y1 - 2007/9/7
N2 - REBa2Cu3Oy films require a high critical current (Ic) under a high magnetic field at 77 K when using power applications. In this study, we fabricated Sm1.04Ba 1.96Cu3Oy (SmBCO) thick films prepared using a low-temperature growth (LTG) technique in order to improve crystal quality and enhance flux pinning. The LTG multilayer thick film using a (SmBCO/Sm-rich layer) × N (N = 1,2,...) multilayer system showed a high crystal quality. Additionally, the LTG multilayer thick film showed not only a high density of dislocations but also low-Tc particles within a high-Tc matrix. Therefore, the LTG multilayer film showed an Ic of 20.6 A/cm-width (77 K, B // c, B = 5 T) and had a thickness of only 1.35 μm and a low anisotropy Ic for the high-magnetic-field direction. These results support to the developing possibility of power devices using a solenoid-type coil.
AB - REBa2Cu3Oy films require a high critical current (Ic) under a high magnetic field at 77 K when using power applications. In this study, we fabricated Sm1.04Ba 1.96Cu3Oy (SmBCO) thick films prepared using a low-temperature growth (LTG) technique in order to improve crystal quality and enhance flux pinning. The LTG multilayer thick film using a (SmBCO/Sm-rich layer) × N (N = 1,2,...) multilayer system showed a high crystal quality. Additionally, the LTG multilayer thick film showed not only a high density of dislocations but also low-Tc particles within a high-Tc matrix. Therefore, the LTG multilayer film showed an Ic of 20.6 A/cm-width (77 K, B // c, B = 5 T) and had a thickness of only 1.35 μm and a low anisotropy Ic for the high-magnetic-field direction. These results support to the developing possibility of power devices using a solenoid-type coil.
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U2 - 10.1143/JJAP.46.L807
DO - 10.1143/JJAP.46.L807
M3 - Article
AN - SCOPUS:34648815100
SN - 0021-4922
VL - 46
SP - L807-L809
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 33-35
ER -