抄録
The electronic structures of simplified poly(disilanylene(thienylene)n) (n = 1-5) have been studied in detail on the basis of the one-dimensional tight-binding self-consistent fieldcrystal orbital method. The result suggests that the sp3-hybridized orbital of silicon atoms almost cuts off the π-conjugation occurring from the thienylene units. The π-π* interband transition energy becomes smaller with an increase of n (number of thiophene rings), while the σ-σ* one shows almost no change. Electronic structures of poly(ethylene(thienylene)n) (n = 1-3), poly(silylene(thienylene)n) (n = 1), and polythiophene have also been examined for comparison.
本文言語 | 英語 |
---|---|
ページ(範囲) | 3496-3501 |
ページ数 | 6 |
ジャーナル | Organometallics |
巻 | 13 |
号 | 9 |
DOI | |
出版ステータス | 出版済み - 9月 1 1994 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 物理化学および理論化学
- 有機化学
- 無機化学