Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

Xeniya Kozina, Tino Jaeger, Siham Ouardi, Andrei Gloskowskij, Gregory Stryganyuk, Gerhard Jakob, Takeharu Sugiyama, Eiji Ikenaga, Gerhard H. Fecher, Claudia Felser

研究成果: ジャーナルへの寄稿学術誌査読

10 被引用数 (Scopus)

抄録

The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

本文言語英語
論文番号221908
ジャーナルApplied Physics Letters
99
22
DOI
出版ステータス出版済み - 11月 28 2011
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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