抄録
The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.
本文言語 | 英語 |
---|---|
論文番号 | 221908 |
ジャーナル | Applied Physics Letters |
巻 | 99 |
号 | 22 |
DOI | |
出版ステータス | 出版済み - 11月 28 2011 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 物理学および天文学(その他)