Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto; R. Hattori; J. Shirafuji

doi:10.1016/0165-1633(91)90139-C

Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto
, R. Hattori
, J. Shirafuji

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

3 被引用数 (Scopus)

抄録

Electron transport of glow-discharged C₂H₂- and CH₄-based SiC_x:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C₂H₂- and CH₄-based films. This decrease is mainly due to a broadening of the tail states width in SiC_x:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH₄-based films.

本文言語	英語
ページ（範囲）	340-346
ページ数	7
ジャーナル	Solar Energy Materials
巻	23
号	2-4
DOI	https://doi.org/10.1016/0165-1633(91)90139-C
出版ステータス	出版済み - 12月 1 1991
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

工学一般

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10.1016/0165-1633(91)90139-C

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title = "Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition",

abstract = "Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.",

author = "T. Enomoto and R. Hattori and J. Shirafuji",

year = "1991",

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doi = "10.1016/0165-1633(91)90139-C",

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T1 - Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

AU - Enomoto, T.

AU - Hattori, R.

AU - Shirafuji, J.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.

AB - Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.

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UR - https://www.scopus.com/pages/publications/0026403895#tab=citedBy

U2 - 10.1016/0165-1633(91)90139-C

DO - 10.1016/0165-1633(91)90139-C

M3 - Article

AN - SCOPUS:0026403895

SN - 0165-1633

VL - 23

SP - 340

EP - 346

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 2-4

ER -

Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

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