Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

本文言語英語
ホスト出版物のタイトル2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
出版ステータス出版済み - 2011
外部発表はい
イベント2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, ドイツ
継続期間: 5月 22 20115月 26 2011

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

その他

その他2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
国/地域ドイツ
CityBerlin
Period5/22/115/26/11

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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