Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

    研究成果: 書籍/レポート タイプへの寄稿会議への寄与

    抄録

    Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, the source/drain (S/D) junctions are desired to be composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the formation of a contact with a low electron barrier height (ΦBN) is very difficult. We have found that a TiN/Ge contact deposited by sputtering is useful for a low ΦBN contact. In this paper, we present the electrical properties and interfacial structures of the TiN/Ge contact. Furthermore, we also present the electrical properties and interfacial structures of ZrN/Ge and HfN/Ge contacts, which are in the same group-4 transition-metal nitrides. As an application to the optical device, we present the fabrication and device performance of light emission diodes with lateral TiN/Ge/HfGe structures.

    本文言語英語
    ホスト出版物のタイトルULSI Process Integration 9
    編集者C. Claeys, J. Murota, M. Tao, H. Iwai, S. Deleonibus
    出版社Electrochemical Society Inc.
    ページ55-66
    ページ数12
    10
    ISBN(電子版)9781607685395
    DOI
    出版ステータス出版済み - 2015
    イベントSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, 米国
    継続期間: 10月 11 201510月 15 2015

    出版物シリーズ

    名前ECS Transactions
    番号10
    69
    ISSN(印刷版)1938-6737
    ISSN(電子版)1938-5862

    その他

    その他Symposium on ULSI Process Integration 9 - 228th ECS Meeting
    国/地域米国
    CityPhoenix
    Period10/11/1510/15/15

    !!!All Science Journal Classification (ASJC) codes

    • 工学一般

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