Electrical properties of Cu2ZnSnS4 single crystal

Akira Nagaoka; Kenji Yoshino; Hideto Miyake; Tomoyasu Taniyama; Koichi Kakimoto

doi:10.1109/PVSC.2013.6745011

Electrical properties of Cu₂ZnSnS₄ single crystal

Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto

新エネルギー力学部門

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

Cu₂ZnSnS₄ (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se₂ (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900̊C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.

本文言語	英語
ホスト出版物のタイトル	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	2621-2624
ページ数	4
ISBN（印刷版）	9781479932993
DOI	https://doi.org/10.1109/PVSC.2013.6745011
出版ステータス	出版済み - 1月 1 2013
イベント	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, 米国継続期間: 6月 16 2013 → 6月 21 2013

出版物シリーズ

名前	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN（印刷版）	0160-8371

その他

その他	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
国/地域	米国
City	Tampa, FL
Period	6/16/13 → 6/21/13

!!!All Science Journal Classification (ASJC) codes

制御およびシステム工学
産業および生産工学
電子工学および電気工学

文献へのアクセス

10.1109/PVSC.2013.6745011

他のファイルとリンク

引用スタイル

Nagaoka, A., Yoshino, K., Miyake, H., Taniyama, T., & Kakimoto, K. (2013). Electrical properties of Cu₂ZnSnS₄ single crystal. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2621-2624). Article 6745011 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745011

Electrical properties of Cu₂ZnSnS₄ single crystal. / Nagaoka, Akira; Yoshino, Kenji; Miyake, Hideto その他.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2621-2624 6745011 (Conference Record of the IEEE Photovoltaic Specialists Conference).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Nagaoka, A, Yoshino, K, Miyake, H, Taniyama, T & Kakimoto, K 2013, Electrical properties of Cu₂ZnSnS₄ single crystal. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745011, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2621-2624, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, 米国, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745011

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