Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang; A. Ueda; H. Takada; H. Nakashima

doi:10.1016/j.physb.2005.12.106

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang
, A. Ueda
, H. Takada
, H. Nakashima

Energy Engineering Sciences

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

3 被引用数 (Scopus)

抄録

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ_g) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ_g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

本文言語	英語
ページ（範囲）	411-415
ページ数	5
ジャーナル	Physica B: Condensed Matter
巻	376-377
号	1
DOI	https://doi.org/10.1016/j.physb.2005.12.106
出版ステータス	出版済み - 4月 1 2006
イベント	Proceedings of the 23rd International Conference on Defects in Semiconductors - 継続期間: 7月 24 2005 → 7月 29 2005

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1016/j.physb.2005.12.106

他のファイルとリンク

引用スタイル

@article{405e1b884c5a4b37928e75f4e426d01f,

title = "Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements",

abstract = "A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.",

author = "D. Wang and A. Ueda and H. Takada and H. Nakashima",

note = "Funding Information: This study was partially supported by a Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.106",

language = "English",

volume = "376-377",

pages = "411--415",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

AU - Wang, D.

AU - Ueda, A.

AU - Takada, H.

AU - Nakashima, H.

N1 - Funding Information: This study was partially supported by a Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

AB - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

UR - https://www.scopus.com/pages/publications/33645150467

UR - https://www.scopus.com/pages/publications/33645150467#tab=citedBy

U2 - 10.1016/j.physb.2005.12.106

DO - 10.1016/j.physb.2005.12.106

M3 - Conference article

AN - SCOPUS:33645150467

SN - 0921-4526

VL - 376-377

SP - 411

EP - 415

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

抄録

!!!All Science Journal Classification (ASJC) codes

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル