TY - JOUR
T1 - Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements
AU - Wang, D.
AU - Ueda, A.
AU - Takada, H.
AU - Nakashima, H.
N1 - Funding Information:
This study was partially supported by a Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.
AB - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.
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U2 - 10.1016/j.physb.2005.12.106
DO - 10.1016/j.physb.2005.12.106
M3 - Conference article
AN - SCOPUS:33645150467
SN - 0921-4526
VL - 376-377
SP - 411
EP - 415
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -