Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag

Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.