TY - CHAP
T1 - Effects of spruttering due to ion irradiation on plasma anisotropic CVD of Cu
AU - Takenaka, Kosuke
AU - Takeshita, Manabu
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Watanabe, Yukio
N1 - Funding Information:
This work was supported partly by a Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science (KAKENHI 14350021). We are indebted to Prof. S. Samukawa, Tohoku University and Dr. G. Chung, Tokyo Electron Ltd, for supplying Si substrates with trenches. We would like to acknowledge the assistance of Messrs H. Matsuzaki and T. Kinoshita who contributed greatly to the preparation of the experimental set up.
PY - 2005
Y1 - 2005
N2 - This chapter discusses the effects of sputtering due to ion irradiation on plasma anisotropic CVD of copper (Cu). The effects are studied using silicon (Si) substrates with trenches. Cu metallization contributed to scaling down of ultra large scale integration (ULSI), because Cu has a lower resistivity and better electro-migration resistance than aluminum. This chapter describes experimental results regarding deposition and sputtering rates at top, bottom surfaces, and sidewall of trenches. The chapter also discusses the effects of ion irradiation on plasma anisotropic CVD with the accent on roles of sputtering. Sputtering rates on the top and bottom surfaces decrease with increasing R from 0% to 66% and are nearly constant for R = 66-100%. The rate on the top surface is higher than that on the bottom surface. With decreasing the trench width, the deposition rate on the bottom surface increases, while the sputtering rate decreases.
AB - This chapter discusses the effects of sputtering due to ion irradiation on plasma anisotropic CVD of copper (Cu). The effects are studied using silicon (Si) substrates with trenches. Cu metallization contributed to scaling down of ultra large scale integration (ULSI), because Cu has a lower resistivity and better electro-migration resistance than aluminum. This chapter describes experimental results regarding deposition and sputtering rates at top, bottom surfaces, and sidewall of trenches. The chapter also discusses the effects of ion irradiation on plasma anisotropic CVD with the accent on roles of sputtering. Sputtering rates on the top and bottom surfaces decrease with increasing R from 0% to 66% and are nearly constant for R = 66-100%. The rate on the top surface is higher than that on the bottom surface. With decreasing the trench width, the deposition rate on the bottom surface increases, while the sputtering rate decreases.
UR - https://www.scopus.com/pages/publications/84884440120
UR - https://www.scopus.com/pages/publications/84884440120#tab=citedBy
U2 - 10.1016/B978-008044504-5/50015-5
DO - 10.1016/B978-008044504-5/50015-5
M3 - Chapter
AN - SCOPUS:84884440120
SN - 9780080445045
SP - 75
EP - 78
BT - Novel Materials Processing by Advanced Electromagnetic Energy Sources
PB - Elsevier
ER -