Effects of Mg dopant in Al-composition-graded AlxGa1-xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction

Kosuke Sato, Kazuki Yamada, Konrad Sakowski, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Yoshihiro Kangawa, Pawel Kempisty, Stanislaw Krukowski, Jacek Piechota, Isamu Akasaki

研究成果: ジャーナルへの寄稿学術誌査読

9 被引用数 (Scopus)

抄録

A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded AlxGa1-xN (0.45 ≤ x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.

本文言語英語
論文番号096503
ジャーナルApplied Physics Express
14
9
DOI
出版ステータス出版済み - 9月 2021

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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