Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films

Zhengwei Chen, Xu Wang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

    研究成果: ジャーナルへの寄稿学術誌査読

    49 被引用数 (Scopus)

    抄録

    We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.

    本文言語英語
    ページ(範囲)207-214
    ページ数8
    ジャーナルSuperlattices and Microstructures
    90
    DOI
    出版ステータス出版済み - 2月 1 2016

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学一般
    • 凝縮系物理学
    • 電子工学および電気工学

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