TY - JOUR
T1 - Effect of Re-Deposition Layers in Plasma-Facing Wall on Tritium Retention and Tritium Depth Profile
AU - MATSUYAMA, Masao
AU - ZUSHI, Hideki
AU - TOKUNAGA, Kazutoshi
AU - KUZMIN, Arseniy
AU - HANADA, Kazuaki
N1 - Publisher Copyright:
© 2019 The Japan Society of Plasma Science and Nuclear Fusion Research
PY - 2019
Y1 - 2019
N2 - Effect of the re-deposition layers formed on plasma-exposed stainless steel type 316L (SS316L) in QUEST on the retention and depth profile of tritium has been studied by both methods of tritium exposure experiments and numerical analyses of X-ray spectra observed by the β-ray-induced X-ray spectrometry (BIXS). Both samples of plasma-exposed and non-exposed SS316L were exposed to tritium gas under given temperature, time and pressure conditions. Surface of the former sample was covered with re-deposition layers after exposing to the plasma experiments. After tritium exposure, X-ray spectra induced by β-rays emitted from tritium atoms retained in the surface layers and/or dissolved into the bulk were measured using an ultra-low energy X-ray detector consisting of pure Ge semiconductor, and numerical analysis of the observed spectrum was conducted to estimate a tritium depth profile in the sample. As a result, it was found that the amount of tritium in surface layers of the plasma-exposed sample was about five times larger than that of the non-exposed sample, and the tritium depth profile for the plasma-exposed sample was about half depth in comparison with that for the non-exposed sample although the degassing temperature and tritium exposure conditions were the same for both samples. It was suggested, therefore, that the re-deposition layers played a role of diffusion barrier of tritium atoms formed on the sample surface.
AB - Effect of the re-deposition layers formed on plasma-exposed stainless steel type 316L (SS316L) in QUEST on the retention and depth profile of tritium has been studied by both methods of tritium exposure experiments and numerical analyses of X-ray spectra observed by the β-ray-induced X-ray spectrometry (BIXS). Both samples of plasma-exposed and non-exposed SS316L were exposed to tritium gas under given temperature, time and pressure conditions. Surface of the former sample was covered with re-deposition layers after exposing to the plasma experiments. After tritium exposure, X-ray spectra induced by β-rays emitted from tritium atoms retained in the surface layers and/or dissolved into the bulk were measured using an ultra-low energy X-ray detector consisting of pure Ge semiconductor, and numerical analysis of the observed spectrum was conducted to estimate a tritium depth profile in the sample. As a result, it was found that the amount of tritium in surface layers of the plasma-exposed sample was about five times larger than that of the non-exposed sample, and the tritium depth profile for the plasma-exposed sample was about half depth in comparison with that for the non-exposed sample although the degassing temperature and tritium exposure conditions were the same for both samples. It was suggested, therefore, that the re-deposition layers played a role of diffusion barrier of tritium atoms formed on the sample surface.
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U2 - 10.1585/pfr.14.1405125
DO - 10.1585/pfr.14.1405125
M3 - Article
AN - SCOPUS:85087102824
SN - 1880-6821
VL - 14
JO - Plasma and Fusion Research
JF - Plasma and Fusion Research
M1 - 1405125
ER -