Effect of Fe impurities on the generation of process-induced microdefects in Czochralski silicon crystals

Jaroslaw Jablonski, Mina Saito, Yoshiji Miyamura, Masato Imai

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

The enhancement effect of Fe impurities on the generation of surface and bulk microdefects, such as oxidation-induced stacking faults, oxide precipitates, precipitate-dislocation complexes and bulk stacking faults, has been observed in annealed silicon wafers prepared from Czochralski grown crystals intentionally contaminated with iron. The effect remains significant even for an Fe concentration as low as 1012 atoms/cm3. It has been found that Fe facilitates the nucleation of oxide precipitates in silicon. The mechanism of Fe-assisted nucleation of oxide precipitates is discussed. The effect of Fe on the generation of oxidation-induced stacking faults is explained, assuming that both oxide precipitates and Fe:Si precipitates formed near the wafer surface serve as active nucleation sites of these microdefects.

本文言語英語
ページ(範囲)520-525
ページ数6
ジャーナルJapanese Journal of Applied Physics
35
2 PART A
DOI
出版ステータス出版済み - 2月 1996
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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