Effect of Cr2O3 and NiO dopants in α-Al 2O3 on its electrical conductivity under electron irradiation

K. Shiiyama, A. Shiraishi, M. Kutsuwada, S. Matsumura, C. Kinoshita

研究成果: ジャーナルへの寄稿会議記事査読

抄録

The electrical conductivity of single crystals of α-Al 2O3 doped with Cr2O3 (0.03-2.5 wt%), NiO (0.75 wt%) plus Cr2O3 (0.03-0.15 wt%), and NiO (0.75 wt%) has been measured under 1 MeV electron irradiation at 300 K to investigate the effects of the concentration of impurity and of the depth of impurity levels in forbidden bands on the radiation induced conductivity (RIC). The RIC of Cr2O3 and/or NiO doped α-Al2O3 decreases with increasing concentration of Cr2O3 and/or NiO dopants. The electrical conductivity of 2.5 wt% Cr2O3 doped α-Al2O3 is smaller than any other doped materials tested. The dose rate exponent for Cr2O3 doped α-Al2O3 is smaller than that for NiO plus Cr 2O3 doped material, due to deeper trapping centers of Cr (5.8 eV from the conduction band) than those of Ni (2.0 eV). Doping impurities with deep trapping centers are most effective for suppressing RIC.

本文言語英語
ページ(範囲)1520-1523
ページ数4
ジャーナルJournal of Nuclear Materials
329-333
1-3 PART B
DOI
出版ステータス出版済み - 8月 1 2004
イベントProceedings of the 11th Conference on Fusion Research - Kyoto, 日本
継続期間: 12月 7 200312月 12 2003

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 材料科学一般
  • 原子力エネルギーおよび原子力工学

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