Effect of Ar fast atom beam irradiation on alpha-Al2O3 for surface activated room temperature bonding

Ryo Takakura, Seigo Murakami, Ryo Takigawa

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

This study focuses on the surface-activated bonding of sapphire (alpha-Al2O3) wafers at RT. In the surface activation process, Ar fast atom beam (FAB) irradiation is used as a physical sputtering method. The bond strength estimated by the crack opening method is approximately 1.63 J m−2. The binding state of the activated alpha-Al2O3 surface is determined using angle-resolved X-ray photoelectron spectroscopy. The results reveal the existence of two binding energies of Al2p (73.9 and 74.0 eV) on the surface of the FAB-irradiated wafer, indicating that the surface activation changes the binding state of the utmost alpha-Al2O3 surface. This implies that the contact of the changed Al2O3 surface contributes to the formation of a strong bond interface.

本文言語英語
論文番号SG1046
ジャーナルJapanese journal of applied physics
62
DOI
出版ステータス出版済み - 6月 1 2023

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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