TY - JOUR
T1 - Effect of Ar fast atom beam irradiation on alpha-Al2O3 for surface activated room temperature bonding
AU - Takakura, Ryo
AU - Murakami, Seigo
AU - Takigawa, Ryo
N1 - Publisher Copyright:
© 2023 The Japan Society of Applied Physics.
PY - 2023/6/1
Y1 - 2023/6/1
N2 - This study focuses on the surface-activated bonding of sapphire (alpha-Al2O3) wafers at RT. In the surface activation process, Ar fast atom beam (FAB) irradiation is used as a physical sputtering method. The bond strength estimated by the crack opening method is approximately 1.63 J m−2. The binding state of the activated alpha-Al2O3 surface is determined using angle-resolved X-ray photoelectron spectroscopy. The results reveal the existence of two binding energies of Al2p (73.9 and 74.0 eV) on the surface of the FAB-irradiated wafer, indicating that the surface activation changes the binding state of the utmost alpha-Al2O3 surface. This implies that the contact of the changed Al2O3 surface contributes to the formation of a strong bond interface.
AB - This study focuses on the surface-activated bonding of sapphire (alpha-Al2O3) wafers at RT. In the surface activation process, Ar fast atom beam (FAB) irradiation is used as a physical sputtering method. The bond strength estimated by the crack opening method is approximately 1.63 J m−2. The binding state of the activated alpha-Al2O3 surface is determined using angle-resolved X-ray photoelectron spectroscopy. The results reveal the existence of two binding energies of Al2p (73.9 and 74.0 eV) on the surface of the FAB-irradiated wafer, indicating that the surface activation changes the binding state of the utmost alpha-Al2O3 surface. This implies that the contact of the changed Al2O3 surface contributes to the formation of a strong bond interface.
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U2 - 10.35848/1347-4065/acc2c9
DO - 10.35848/1347-4065/acc2c9
M3 - Article
AN - SCOPUS:85153581597
SN - 0021-4922
VL - 62
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
M1 - SG1046
ER -