TY - GEN
T1 - Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator
AU - Yang, Haigui
AU - Iyota, Masatoshi
AU - Ikeura, Shogo
AU - Wang, Dong
AU - Nakashima, Hiroshi
PY - 2011
Y1 - 2011
N2 - Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.
AB - Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.
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U2 - 10.4028/www.scientific.net/KEM.470.79
DO - 10.4028/www.scientific.net/KEM.470.79
M3 - Conference contribution
AN - SCOPUS:79952755702
SN - 9783037850510
T3 - Key Engineering Materials
SP - 79
EP - 84
BT - Technology Evolution for Silicon Nano-Electronics
PB - Trans Tech Publications Ltd
ER -